TRENCH >=100V PG-TSON-8 ISC022N10NM6ATMA1
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Description:
TRENCH >=100V PG-TSON-8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ISC022N10NM6ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20755,Price reference "real-time change" China/Hongkong。 ISC022N10NM6ATMA1 package/specs, Download ISC022N10NM6ATMA1、Datasheet。