MOSFET N-CH 650V 10A TO220 IPAN60R360PFD7SXKSA1
The pictures are for reference only
Model:
IPAN60R360PFD7SXKSA1
Description:
MOSFET N-CH 650V 10A TO220
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPAN60R360PFD7SXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19454,Price reference "real-time change" China/Hongkong。 IPAN60R360PFD7SXKSA1 package/specs, Download IPAN60R360PFD7SXKSA1、Datasheet。