MOSFET N-CH 800V 4.5A TO220-3 IPP80R1K2P7XKSA1
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Description:
MOSFET N-CH 800V 4.5A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPP80R1K2P7XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96173,Price reference "real-time change" China/Hongkong。 IPP80R1K2P7XKSA1 package/specs, Download IPP80R1K2P7XKSA1、Datasheet。