MOSFET N-CH 55V 100A TO262-3 IPI100N06S3L04XK
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Description:
MOSFET N-CH 55V 100A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI100N06S3L04XK(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory45215,Price reference "real-time change" China/Hongkong。 IPI100N06S3L04XK package/specs, Download IPI100N06S3L04XK、Datasheet。