MOSFET N-CH 200V 11.3A 8TDSON BSC12DN20NS3GATMA1
The pictures are for reference only
Description:
MOSFET N-CH 200V 11.3A 8TDSON
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSC12DN20NS3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70657,Price reference "real-time change" China/Hongkong。 BSC12DN20NS3GATMA1 package/specs, Download BSC12DN20NS3GATMA1、Datasheet。