MOSFET N-CH 150V 13A 8TSDSON BSZ900N15NS3GATMA1
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Description:
MOSFET N-CH 150V 13A 8TSDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSZ900N15NS3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory98866,Price reference "real-time change" China/Hongkong。 BSZ900N15NS3GATMA1 package/specs, Download BSZ900N15NS3GATMA1、Datasheet。