MOSFET N-CH 100V 60A TO252-3 IPD60N10S4L12ATMA1
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Description:
MOSFET N-CH 100V 60A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, HEXFET®
DataSheet
IPD60N10S4L12ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24463,Price reference "real-time change" China/Hongkong。 IPD60N10S4L12ATMA1 package/specs, Download IPD60N10S4L12ATMA1、Datasheet。