MOSFET N-CH 100V 10.6/71A 8TDSON BSC123N10LSGATMA1
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Description:
MOSFET N-CH 100V 10.6/71A 8TDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSC123N10LSGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory81042,Price reference "real-time change" China/Hongkong。 BSC123N10LSGATMA1 package/specs, Download BSC123N10LSGATMA1、Datasheet。