MOSFET N-CH 100V 166A TO263-7 IPB032N10N5ATMA1
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Description:
MOSFET N-CH 100V 166A TO263-7
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB032N10N5ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94806,Price reference "real-time change" China/Hongkong。 IPB032N10N5ATMA1 package/specs, Download IPB032N10N5ATMA1、Datasheet。