MOSFET N-CH 650V 31.2A D2PAK IPB65R110CFDATMA1
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Description:
MOSFET N-CH 650V 31.2A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPB65R110CFDATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90208,Price reference "real-time change" China/Hongkong。 IPB65R110CFDATMA1 package/specs, Download IPB65R110CFDATMA1、Datasheet。