MOSFET N-CH 200V 88A TO263-3 IPB110N20N3LFATMA1
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Description:
MOSFET N-CH 200V 88A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB110N20N3LFATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory97658,Price reference "real-time change" China/Hongkong。 IPB110N20N3LFATMA1 package/specs, Download IPB110N20N3LFATMA1、Datasheet。