MOSFET N-CH 600V 2.6A SOT223 IPN60R3K4CEATMA1
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Description:
MOSFET N-CH 600V 2.6A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPN60R3K4CEATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3189,Price reference "real-time change" China/Hongkong。 IPN60R3K4CEATMA1 package/specs, Download IPN60R3K4CEATMA1、Datasheet。