MOSFET N-CH 600V 6.8A SOT223 IPN60R1K0CEATMA1
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Description:
MOSFET N-CH 600V 6.8A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPN60R1K0CEATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory50336,Price reference "real-time change" China/Hongkong。 IPN60R1K0CEATMA1 package/specs, Download IPN60R1K0CEATMA1、Datasheet。