MOSFET P-CH 30V 17.7/100A 8TDSON BSC060P03NS3EGATMA1
The pictures are for reference only
Model:
BSC060P03NS3EGATMA1
Description:
MOSFET P-CH 30V 17.7/100A 8TDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSC060P03NS3EGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33867,Price reference "real-time change" China/Hongkong。 BSC060P03NS3EGATMA1 package/specs, Download BSC060P03NS3EGATMA1、Datasheet。