MOSFET N-CH 100V 8.5A/45A TDSON BSC196N10NSGATMA1
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Description:
MOSFET N-CH 100V 8.5A/45A TDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSC196N10NSGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4678,Price reference "real-time change" China/Hongkong。 BSC196N10NSGATMA1 package/specs, Download BSC196N10NSGATMA1、Datasheet。