MOSFET N-CH 100V 11A/63A 8PQFN IRFH5110TRPBF
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Description:
MOSFET N-CH 100V 11A/63A 8PQFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRFH5110TRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79413,Price reference "real-time change" China/Hongkong。 IRFH5110TRPBF package/specs, Download IRFH5110TRPBF、Datasheet。