MOSFET N-CH 20V 49A/100A 8PQFN IRFH6200TRPBF
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Description:
MOSFET N-CH 20V 49A/100A 8PQFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRFH6200TRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60639,Price reference "real-time change" China/Hongkong。 IRFH6200TRPBF package/specs, Download IRFH6200TRPBF、Datasheet。