MOSFET N-CH 950V 9A TO252-3 IPD95R750P7ATMA1
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Description:
MOSFET N-CH 950V 9A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD95R750P7ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95328,Price reference "real-time change" China/Hongkong。 IPD95R750P7ATMA1 package/specs, Download IPD95R750P7ATMA1、Datasheet。