IRF9520NPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRF9520NPBF

Description:

MOSFET P-CH 100V 6.8A TO220AB

Stock:

59104

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.26

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

6.8A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

27 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

350 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

480 mΩ @ 4A,10V

Power dissipation (maximum)

Vgs (max)

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

pipe

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

Encapsulation/Housing

TO-220AB

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

Final sale

DataSheet

下载IRF9520NPBF.pdf

IRF9520NPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59104,Price reference "real-time change" China/Hongkong。 IRF9520NPBF package/specs, Download IRF9520NPBF、Datasheet。