MOSFET N-CH 75V 80A D2PAK IPB049NE7N3GATMA1
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Description:
MOSFET N-CH 75V 80A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPB049NE7N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory65910,Price reference "real-time change" China/Hongkong。 IPB049NE7N3GATMA1 package/specs, Download IPB049NE7N3GATMA1、Datasheet。