MOSFET N-CH 650V 19A 4VSON IPL60R185P7AUMA1
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Description:
MOSFET N-CH 650V 19A 4VSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPL60R185P7AUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory85925,Price reference "real-time change" China/Hongkong。 IPL60R185P7AUMA1 package/specs, Download IPL60R185P7AUMA1、Datasheet。