MOSFET N-CH 120V 100A TO263-3 IPB100N12S305ATMA1
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Description:
MOSFET N-CH 120V 100A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB100N12S305ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73634,Price reference "real-time change" China/Hongkong。 IPB100N12S305ATMA1 package/specs, Download IPB100N12S305ATMA1、Datasheet。