MOSFET N-CH 800V 11A TO220-3 SPP11N80C3XKSA1
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Description:
MOSFET N-CH 800V 11A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPP11N80C3XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33420,Price reference "real-time change" China/Hongkong。 SPP11N80C3XKSA1 package/specs, Download SPP11N80C3XKSA1、Datasheet。