MOSFET N-CH 80V 200A HSOG-8 IAUS200N08S5N023ATMA1
The pictures are for reference only
Model:
IAUS200N08S5N023ATMA1
Description:
MOSFET N-CH 80V 200A HSOG-8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, OptiMOS™
DataSheet
IAUS200N08S5N023ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70875,Price reference "real-time change" China/Hongkong。 IAUS200N08S5N023ATMA1 package/specs, Download IAUS200N08S5N023ATMA1、Datasheet。