MOSFET N-CH 650V 16A TO220-3 IPP60R199CPXKSA1
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Description:
MOSFET N-CH 650V 16A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPP60R199CPXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78280,Price reference "real-time change" China/Hongkong。 IPP60R199CPXKSA1 package/specs, Download IPP60R199CPXKSA1、Datasheet。