MOSFET N-CH 650V 31.2A TO220-3 IPP65R110CFDAAKSA1
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Description:
MOSFET N-CH 650V 31.2A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, CoolMOS™
DataSheet
IPP65R110CFDAAKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory2873,Price reference "real-time change" China/Hongkong。 IPP65R110CFDAAKSA1 package/specs, Download IPP65R110CFDAAKSA1、Datasheet。