MOSFET 650V NCH SIC TRENCH IMW65R107M1HXKSA1
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Description:
MOSFET 650V NCH SIC TRENCH
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IMW65R107M1HXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory60776,Price reference "real-time change" China/Hongkong。 IMW65R107M1HXKSA1 package/specs, Download IMW65R107M1HXKSA1、Datasheet。