MOSFET N-CH 60V 50A D2PAK IPB090N06N3GATMA1
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Description:
MOSFET N-CH 60V 50A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB090N06N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96762,Price reference "real-time change" China/Hongkong。 IPB090N06N3GATMA1 package/specs, Download IPB090N06N3GATMA1、Datasheet。