MOSFET N-CH 650V 15.1A TO252-3 IPD65R400CEAUMA1
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Description:
MOSFET N-CH 650V 15.1A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD65R400CEAUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76910,Price reference "real-time change" China/Hongkong。 IPD65R400CEAUMA1 package/specs, Download IPD65R400CEAUMA1、Datasheet。