MOSFET N-CH 650V 10A SOT223 IPN60R360PFD7SATMA1
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Model:
IPN60R360PFD7SATMA1
Description:
MOSFET N-CH 650V 10A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPN60R360PFD7SATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18682,Price reference "real-time change" China/Hongkong。 IPN60R360PFD7SATMA1 package/specs, Download IPN60R360PFD7SATMA1、Datasheet。