MOSFET P-CH 30V 9.2A 8DSO BSO130P03SHXUMA1
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Description:
MOSFET P-CH 30V 9.2A 8DSO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSO130P03SHXUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95834,Price reference "real-time change" China/Hongkong。 BSO130P03SHXUMA1 package/specs, Download BSO130P03SHXUMA1、Datasheet。