MOSFET N-CH 800V 3.9A TO252-3 IPD80R1K4CEATMA1
The pictures are for reference only
Description:
MOSFET N-CH 800V 3.9A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD80R1K4CEATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory628,Price reference "real-time change" China/Hongkong。 IPD80R1K4CEATMA1 package/specs, Download IPD80R1K4CEATMA1、Datasheet。