IPD25CN10NGATMA1 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ IPD25CN10NGATMA1

The pictures are for reference only

Brand:

Infineon

Model:

IPD25CN10NGATMA1

Description:

MOSFET N-CH 100V 35A TO252-3

Stock:

24485

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.31

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

35A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

31 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

2070 pF @ 50 V

On resistance (maximum) for different Ids and Vgs

25 mΩ @ 35A,10V

Power dissipation (maximum)

71W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 39µA

packing

TR,CT,bulk

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO252-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载IPD25CN10NGATMA1.pdf

IPD25CN10NGATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24485,Price reference "real-time change" China/Hongkong。 IPD25CN10NGATMA1 package/specs, Download IPD25CN10NGATMA1、Datasheet。