MOSFET N-CH 25V 29A/100A TDSON BSC018NE2LSIATMA1
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Description:
MOSFET N-CH 25V 29A/100A TDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSC018NE2LSIATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24023,Price reference "real-time change" China/Hongkong。 BSC018NE2LSIATMA1 package/specs, Download BSC018NE2LSIATMA1、Datasheet。