MOSFET N-CH 100V 67A TO252-3 IPD12CN10NGATMA1
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Description:
MOSFET N-CH 100V 67A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD12CN10NGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17289,Price reference "real-time change" China/Hongkong。 IPD12CN10NGATMA1 package/specs, Download IPD12CN10NGATMA1、Datasheet。