MOSFET P-CH 40V 120A D2PAK IPB120P04P4L03ATMA1
The pictures are for reference only
Model:
IPB120P04P4L03ATMA1
Description:
MOSFET P-CH 40V 120A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPB120P04P4L03ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71872,Price reference "real-time change" China/Hongkong。 IPB120P04P4L03ATMA1 package/specs, Download IPB120P04P4L03ATMA1、Datasheet。