MOSFET P-CH 40V 180A TO263-7 IPB180P04P4L02ATMA2
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Model:
IPB180P04P4L02ATMA2
Description:
MOSFET P-CH 40V 180A TO263-7
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB180P04P4L02ATMA2(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95049,Price reference "real-time change" China/Hongkong。 IPB180P04P4L02ATMA2 package/specs, Download IPB180P04P4L02ATMA2、Datasheet。