MOSFET N-CH 600V 26.7A TO220 IPAW60R190CEXKSA1
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Description:
MOSFET N-CH 600V 26.7A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPAW60R190CEXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6611,Price reference "real-time change" China/Hongkong。 IPAW60R190CEXKSA1 package/specs, Download IPAW60R190CEXKSA1、Datasheet。