MOSFET P-CH 60V 80A TO263-3 SPB80P06PGATMA1
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Description:
MOSFET P-CH 60V 80A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPB80P06PGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35372,Price reference "real-time change" China/Hongkong。 SPB80P06PGATMA1 package/specs, Download SPB80P06PGATMA1、Datasheet。