MOSFET N-CH 650V 16.4A 4VSON IPL60R199CPAUMA1
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Description:
MOSFET N-CH 650V 16.4A 4VSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPL60R199CPAUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31114,Price reference "real-time change" China/Hongkong。 IPL60R199CPAUMA1 package/specs, Download IPL60R199CPAUMA1、Datasheet。