MOSFET N-CH 40V 100A 8TDSON-34 IPC100N04S52R8ATMA1
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Model:
IPC100N04S52R8ATMA1
Description:
MOSFET N-CH 40V 100A 8TDSON-34
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPC100N04S52R8ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory71826,Price reference "real-time change" China/Hongkong。 IPC100N04S52R8ATMA1 package/specs, Download IPC100N04S52R8ATMA1、Datasheet。