MOSFET N-CH 950V 4A TO251-3 IPU95R2K0P7AKMA1
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Description:
MOSFET N-CH 950V 4A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPU95R2K0P7AKMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory28693,Price reference "real-time change" China/Hongkong。 IPU95R2K0P7AKMA1 package/specs, Download IPU95R2K0P7AKMA1、Datasheet。