MOSFET N-CH 600V 37.9A D2PAK IPB60R099C6ATMA1
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Description:
MOSFET N-CH 600V 37.9A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPB60R099C6ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39051,Price reference "real-time change" China/Hongkong。 IPB60R099C6ATMA1 package/specs, Download IPB60R099C6ATMA1、Datasheet。