TRENCH >=100V PG-TO252-3 IPD19DP10NMATMA1
The pictures are for reference only
Description:
TRENCH >=100V PG-TO252-3
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD19DP10NMATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12805,Price reference "real-time change" China/Hongkong。 IPD19DP10NMATMA1 package/specs, Download IPD19DP10NMATMA1、Datasheet。