TRENCH >=100V PG-TO252-3 IPD18DP10LMATMA1
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Description:
TRENCH >=100V PG-TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD18DP10LMATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3832,Price reference "real-time change" China/Hongkong。 IPD18DP10LMATMA1 package/specs, Download IPD18DP10LMATMA1、Datasheet。