IPLK80R600P7ATMA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPLK80R600P7ATMA1

Description:

MOSFET 800V TDSON-8

Stock:

4325

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.4

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Parameters

Current at 25 ° C - continuous drain (Id)

Drain source voltage (Vdss)

800 V

Drive voltage (maximum RdsOn, minimum RdsOn)

FET Type

FET function

Gate charge (Qg) at different Vgs (maximum)

Input capacitance at different Vds (Ciss) (maximum)

On resistance (maximum) for different Ids and Vgs

Power dissipation (maximum)

Vgs (max)

Vgs (th) (maximum) for different Ids

packing

TR,CT

series

CoolMOS™ P7

technology

MOSFET(Metal oxide)

working temperature

Encapsulation/Housing

PG-TDSON-8

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

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IPLK80R600P7ATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4325,Price reference "real-time change" China/Hongkong。 IPLK80R600P7ATMA1 package/specs, Download IPLK80R600P7ATMA1、Datasheet。