IPP330P10NMAKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPP330P10NMAKSA1

Description:

TRENCH >=100V PG-TO220-3

Stock:

70564

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$1.13

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Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

6.9A(Ta), 62A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

236 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

11000 pF @ 50 V

On resistance (maximum) for different Ids and Vgs

33 mΩ @ 53A, 10V

Power dissipation (maximum)

3.8W(Ta),300W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 5.55mA

packing

pipe

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO220-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

On sale

DataSheet

下载IPP330P10NMAKSA1.pdf

IPP330P10NMAKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70564,Price reference "real-time change" China/Hongkong。 IPP330P10NMAKSA1 package/specs, Download IPP330P10NMAKSA1、Datasheet。