SICFET N-CH 1.2KV 4.7A TO263 IMBG120R350M1HXTMA1
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Model:
IMBG120R350M1HXTMA1
Description:
SICFET N-CH 1.2KV 4.7A TO263
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IMBG120R350M1HXTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33617,Price reference "real-time change" China/Hongkong。 IMBG120R350M1HXTMA1 package/specs, Download IMBG120R350M1HXTMA1、Datasheet。