TRENCH >=100V PG-HSOG-8 IPTG111N20NM3FDATMA1
The pictures are for reference only
Model:
IPTG111N20NM3FDATMA1
Description:
TRENCH >=100V PG-HSOG-8
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPTG111N20NM3FDATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46800,Price reference "real-time change" China/Hongkong。 IPTG111N20NM3FDATMA1 package/specs, Download IPTG111N20NM3FDATMA1、Datasheet。