IRFP7718PBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRFP7718PBF

Description:

MOSFET N-CH 75V 195A TO247AC

Stock:

24582

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$1.28

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Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

195A(Tc)

Drain source voltage (Vdss)

75 V

Drive voltage (maximum RdsOn, minimum RdsOn)

6V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

830 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

29550 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

1.8 mΩ @ 100A,10V

Power dissipation (maximum)

517W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3.7V @ 250µA

packing

pipe

series

HEXFET®, StrongIRFET™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

TO-247AC

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

Final sale

DataSheet

下载IRFP7718PBF.pdf

IRFP7718PBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory24582,Price reference "real-time change" China/Hongkong。 IRFP7718PBF package/specs, Download IRFP7718PBF、Datasheet。